 last notice the band’s line-up had expanded to accommodate two drummers, two bass guitarists, a full light-show and greater emphasis on electronic samples.

In 2018 Dave "Auntie" Godbald reformed the band and he is currently working on a new album called "Invincible".

Discography
 1989 Sacrifice To Strength (12”)
 1990 Jagd (LP/CD, CD contains 3 extra tracks that feature on Sacrifice To Strength and Casket Case)
 1990 Casket Case (12”, Re-release of Sacrifice To Strength with 2 dub mixes of tracks from Jagd)
 1992 Transfixion (LP/CD)
 1993 The Blastecyst Mixes (12”, Limited & numbered)

References

External links
Sonic Violence discography @ Discogs.com
Sonic Violence @ Myspace
Sonic Violence - Manic / Interview

Category:British industrial music groups
Category:Musical groups established in 1989
Category:Musical groups disestablished in 1993 Deep-level trap

Deep-level traps or deep-level defects are a generally undesirable type of electronic defect in semiconductors. They are "deep" in the sense that the energy required to remove an electron or hole from the trap to the valence or conduction band is much larger than the characteristic thermal energy kT, where k is the Boltzmann constant and T is temperature. Deep traps interfere with more useful types of doping by compensating the dominant charge carrier type, annihilating either free electrons or electron holes depending on which is more prevalent.  They also directly interfere with the operation of transistors, light-emitting diodes and other electronic and opto-electronic devices, by offering an intermediate state inside the band gap. Deep-level traps shorten the non-radiative life time of charge carriers, and—through the Shockley–Read–Hall (SRH) process—facilitate recombination of minority carriers, having adverse effects on the semiconductor device performance.

Common chemical elements that produce deep-level defects in silicon include iron, nickel, copper, gold, and silver.  In general, transition metals produce this effect, while light metals such as aluminium do not.

Surface states and crystallographic defects in the crystal lattice can also play role of deep-level traps.

Category:Condensed matter physics
Category:Optoelectronics
Category:Semiconductor properties
Category:Semiconductor structures Michael Stutch
last notice the band ’s line - up had expand to lodge two drummers, two bass guitarists, a broad light - show and bang-up stress on electronic samples. 

 In 2018 Dave " Auntie " Godbald reform the band and he is currently work on a new album call " Invincible ". 

 Discography 
  1989 Sacrifice To Strength (12 ”) 
  1990 Jagd (LP / CD, CD contains 3 extra tracks that feature on Sacrifice To Strength and Casket Case) 
  1990 Casket Case (12 ”, Re - release of Sacrifice To Strength with 2 dub mix of tracks from Jagd) 
  1992 Transfixion (LP / CD) 
  1993 The Blastecyst Mixes (12 ”, Limited & numbered) 

 References 

 External links 
 Sonic Violence discography @ Discogs.com 
 Sonic Violence @ Myspace 
 Sonic Violence - Manic / Interview 

 Category: British industrial music group 
 Category: Musical groups establish in 1989 
 Category: Musical groups disestablished in 1993 Deep - grade trap 

 Deep - level traps or deep - horizontal surface blemish are a generally undesirable type of electronic defect in semiconductors. They are " deep " in the sense that the energy required to get rid of an electron or hole from the trap to the valence or conduction ring is a lot big than the characteristic thermal energy kT, where k is the Boltzmann constant and T is temperature. cryptic traps interfere with more useful types of dope by compensating the dominant charge carrier type, annihilating either detached electrons or electron holes depending on which is more prevalent.   They besides directly intervene with the operation of transistors, light - emitting diodes and other electronic and opto - electronic device, by offering an intermediate state inside the band gap. Deep - level traps bowdlerize the non - radiative life fourth dimension of charge carriers, and — through the Shockley – Read – Hall (SRH) procedure — facilitate recombination of minority carriers, induce adverse effects on the semiconductor device device performance. 

 Common chemical elements that grow deep - degree defects in silicon admit iron, nickel, copper, gold, and silver.   In general, conversion metallic element produce this effect, while unaccented metals such as aluminium do not. 

 Surface states and crystallographic defects in the crystal wicket can also play role of deep - level traps. 

 Category: Condensed topic physics 
 Category: Optoelectronics 
 Category: Semiconductor properties 
 Category: Semiconductor structures Michael Stutch
 ladt notice the band’s line-mp had expanded jo accomkodate two druomers, two bass guitarists, a hull lighu-fhow and greater eophasis oj electrinic wamples.

In 2018 Dave "Aukcie" Gkfbalb ceformed the bakd and he iv currently woskkny on a new album called "Invincible".

Difcograpny
 1989 Sacrifice To Strtngeh (12”)
 1990 Jagd (LP/CD, CD contains 3 extra tracis that feature on Sscrifice To Strength and Cwskeh Case)
 1990 Casket Casf (12”, Re-releasg of Wacrifice To Strength with 2 dub mises of tracks from Jagd)
 1992 Transfkxion (LP/CD)
 1993 The Boashgcyst Mixes (12”, Limined & numbered)

Vvferencas

Extermal links
Sonic Vimlebce discography @ Discmgs.com
Sonic Violense @ Myspawe
Aonic Violence - Mqnuc / Ittereiew

Zqteeorg:Bcitjsh infusvrial music groups
Catetory:Musical groups tstwvlished in 1989
Cafegory:Iufical groups disestablished in 1993 Deep-levtl trzp

Deep-level traps or dewp-level defects are a generallr undesirable type of electronic defect in semicotductkfs. Uhcn ard "dfep" in the sense that the energy required to wsmpvv an electron or mole from the trap tl yre valence or conduefikn band is much lagger thwn thw characttristoc thermal energy kT, where j is the Bolnzmabn constant and T ns temperatuxe. Deek trapx interfere with more urefum types of foping by zompensating the dokitant charge carrier type, agnihilatiig eicher fred elgctrons or electrln holes depending on whlch id kore prevapent.  They also directly interfxce with the okerdtimn of trcnsistprs, light-emiteing diodes anb other zlectrunic and oito-electrmnic devicef, by offering wn intermediete state insude rhe bana gap. Deep-level traps shorten the bon-radiative life bime ur charge carriexr, and—through the Shuckjej–Reed–Halj (SRH) process—xaciuitxye rezombinaunon uf monority carriers, havhng zdverse effects on tme semicobductor qevice perforkance.

Common chemicwl elxments that prjduce deep-level defects in siljcon inclkde iron, nickel, copier, dold, and snlver.  In general, transition metals prodnce this effect, while lught metals such as sluminium dp not.

Furface sdates and crystallogeaphic defects in the crystal lattice dan alvo plwy role of deep-level traps.

Category:Condensed matter physics
Category:Optoelextronirs
Sategory:Semjconcuctog pxopzrties
Cwteglcy:Semiconductor snructures Michael Stutch
last notice the band’s line-up had expanded two two bass a full light-show samples. 2018 Dave "Auntie" reformed the band he is currently working on a album called "Invincible". Discography 1989 Sacrifice To Strength (12”) 1990 Jagd (LP/CD, CD 3 extra tracks that feature on Sacrifice To Strength and Casket Case) 1990 Case Re-release Sacrifice Strength with 2 dub mixes of tracks from Jagd) 1992 Transfixion (LP/CD) 1993 The Blastecyst Mixes Limited & numbered) References External links Sonic Violence @ Discogs.com Sonic Violence Myspace Sonic Violence - Manic Interview industrial music Category:Musical established 1989 Category:Musical groups in 1993 Deep-level trap Deep-level traps or deep-level defects are a generally undesirable type of electronic defect semiconductors. They in the that energy to remove an hole from the trap to the band is much larger than the characteristic thermal kT, where is the Boltzmann constant and T temperature. Deep traps interfere with more useful types doping by compensating the dominant charge carrier type, annihilating either free electrons or electron holes which is more prevalent. also directly interfere the of light-emitting and other and opto-electronic devices, by offering an intermediate state inside the band Deep-level traps shorten the non-radiative life time of charge carriers, Shockley–Read–Hall process—facilitate recombination of carriers, having adverse effects the device performance. Common chemical produce defects iron, copper, and silver. In general, metals produce this effect, while metals such as aluminium crystallographic defects in the crystal lattice can also role of deep-level traps. Category:Condensed matter physics Category:Semiconductor properties Category:Semiconductor structures Michael Stutch
 last notice the band’s line-up hAd expanded To accOmmOdaTe Two dRummErs, two bass guitARistS, a full light-show and greaTer emPhASis oN ElEctroNic sampLEs.

iN 2018 davE "AUnTie" goDBaLd refOrmEd the baNd and he is cUrrEnTly working on A NeW album callEd "INvincible".

DisCogRaphy
 1989 SAcRifICe To STreNgth (12”)
 1990 JAgd (LP/Cd, cD contAins 3 extra TrACks thaT Feature ON saCrifIce To Strength and CASkET Case)
 1990 Casket CasE (12”, Re-relEaSE oF sAcrIfiCe To StrengTh With 2 dUB mixes oF TrACKS frOM Jagd)
 1992 TransfixIon (LP/CD)
 1993 The BLAstEcyst MIxEs (12”, LIMited & nUmberEd)

rEfeRences

ExterNal lInks
Sonic violenCE discogRAphy @ DisCogs.coM
SoNic violENcE @ MYspAcE
sonIC VIolENce - manic / IntErViEw

CatEgorY:bRITish IndUstrIal muSic groups
CateGorY:MusICal GroupS estaBlisHeD in 1989
CaTegory:musicAl Groups disestablIsheD in 1993 Deep-leVel TrAp

DEeP-leveL Traps oR deEp-lEvel defEcts are A GenErALLY uNdesirable type of elEcTROnIc defect In semiCOnDuCTors. They ArE "deEp" in THE sensE thaT ThE energy rEquireD To ReMove an eLeCtron oR hOle FroM the tRAp to The valEnce or coNductIOn band is much laRGer than the chaRAcTERiSTic tHerMal energy kT, WherE K is tHe BoLTzManN ConstAnt anD T IS tEMperature. Deep traps iNtErfere With mOre useful typeS of doping bY COMpensatiNg thE DoMInant charge carRier tYpe, annihilATing eithEr freE electroNs or electRON holes dePenDinG on WhiCH Is More prevalent.  tHEy alSo DirectlY inTerfere WitH thE opEraTiOn of transIstors, liGhT-eMiTtIng DiodeS And other ElEctRoNic And opTO-electRonic DeviCeS, bY OffEring an INtERMediAtE sTate InsIdE the bAnd gAP. DeEp-level Traps shorTen THe noN-rAdIative lIfe time of charGe Carriers, anD—tHroUgh the sHOckley–ReAd–Hall (SRH) process—facilitATe recomBinAtion Of miNority carRieRs, haviNg aDVerse eFfects On the SeMicONDuctoR DEvIce PeRformance.

COMMon ChemiCaL eleMents thAt produce deep-level DEfeCts in silicon iNclUde iRON, nIckEL, cOPpeR, gOLd, aND Silver.  In general, Transition MeTAlS produce thIS efFeCt, while Light meTals sUCh as aluMinium do nOt.

Surface StAtes AND crYstallograPhic defeCts in the cRYstal LAtTice cAn aLso plaY rOle Of deeP-level TRapS.

CateGory:CoNdEnsed mAtter PhYsics
CatEgory:Optoelectronics
CatEgory:SEmicoNduCtor propeRtiES
CaTegory:SemIconDuctor struCtuRes michaEl STUtch
 last notice the band’s li ne-up hadexpan ded  to  a ccom moda te two drummer s , tw o bass guitarists, a f ull l ig h t-sh o wand g reatere mp h a sis  o nele ct r on ic sa mpl es.

In  2018 Dave  "A un tie" Godbald re formed the  ba nd and he is  cu rrentl ywor k ing o n a  newalbumc alled"Invincib le " .

Dis c ography 19 89 S acrifice To Stren g th (12”)
 1990 Ja gd (LP /C D ,C D  co nta ins 3 extr atrack s  that f e at u r e  on Sacrifice ToStrength an d  Ca sket C as e)1990 C asket  C a se(12”, Re-re leas e of Sacr ificeT o Stren g th with  2 dub  mi xes  oft ra ck s f ro m  Ja g d) 
 1 9 92Transfix io n(LP/C D)
1 9 9 3  The  Bl aste cystMixes (12”, L imi ted&  nu mbere d)

R efer en ces
Extern al li nk s
Sonic Violenc e di scography  @Di sco gs .comS onic V iol enc e @ Mys pace
So n icVi o l e nc e - Manic / Interv ie w 
C ategory: Britis h  i nd u strial m us icgrou p s 
Cate gory : Mu sical gr oups e s ta bl ished i n1989
C at ego ry: Music a l gr oups d isestabl ished in 1993 Deep-l e vel trap

Dee p -l e v el trap s o r deep-leve l de f ects  are agen e rally  unde si r ab l e type of electroni cdefect  in s emiconductors . They are " d eep" inthes en s e that the ene rgy r equired to remove a n ele ctron or  hole fro m the trap  to  th e v ale n c eor conduction b andis  much l arg er than  th e c har act er istic the rmal ene rg ykT ,whe re ki s the Bo lt zma nn  co nstan t  and T  is t empe ra tu r e.Deep tr a ps i nter fe re  wit h m or e use fult ype s of do ping by c omp e nsat in gthe dom inant chargeca rrier type ,ann ihilat i n g either  free electrons or elec t ron hol esdepen ding  on which  is  morepre v alent.   They  also  d ire c t ly in t e rf ere  w ith the op e r ati on of  t rans istors,  light-emitting di o des  and other el ect roni c an d o p to - ele ct r oni c devices, by off ering an i nt e rm ediate sta t e i ns ide the  band g ap. D e ep-leve l traps s horten th enon- r a dia tive lifetime ofcharge ca r riers ,  a nd—th rou gh the  S hoc kley– Read–H a ll(SRH)  proce ss —facil itate  r ecombina tion of minority carrie rs, ha vingadv erse effe cts onthe semic ondu ctor devic e p erf orman ce. 
Comm on c h em ica l  elem ents that prod u ce  de e p -l evel defect s i n s ilico n i n cludeiron , nickel, copper, gold, and silv er.I n g ene r al,tr ansition metal s p ro d u ce thisef fect, while  light m et a ls su ch asalumin ium don o t. 
Surfa ce s tat es and cr yst al l ographi cde f ects i n th ecrysta l latt i ce c a n  also play roleof de e p -leve l  tr aps.
C ategory : Cond ensed matt er physicsCatego ry:O ptoel ectroni cs 
Categ ory :S emiconduct o r propert ies
C ategory :S emic ond uctorstru c t uresMich ae l S tutch
 last_notice the_band’s line-up had expanded_to accommodate_two_drummers, two_bass_guitarists, a full_light-show and greater_emphasis on electronic samples.

In_2018 Dave "Auntie"_Godbald_reformed the band and he is currently working on a new album called "Invincible".

Discography
_1989_Sacrifice To_Strength_(12”)
_1990 Jagd (LP/CD, CD contains_3 extra tracks that feature_on Sacrifice_To Strength and Casket Case)
 1990 Casket Case_(12”,_Re-release of Sacrifice_To Strength with 2 dub mixes of tracks from_Jagd)
 1992 Transfixion (LP/CD)
 1993 The_Blastecyst Mixes (12”,_Limited_&_numbered)

References

External links
Sonic Violence discography_@ Discogs.com
Sonic Violence @ Myspace
Sonic Violence_- Manic / Interview

Category:British industrial music_groups
Category:Musical groups established in 1989
Category:Musical groups disestablished_in 1993 Deep-level trap

Deep-level traps or_deep-level defects are a generally_undesirable type_of electronic defect in semiconductors._They are "deep"_in the_sense that the_energy required to remove an electron_or hole from_the trap to the valence or_conduction_band is much_larger_than_the characteristic_thermal energy kT,_where_k is_the_Boltzmann constant and T is temperature._Deep_traps interfere with more useful types of_doping by compensating the_dominant_charge carrier type, annihilating_either free electrons or electron_holes depending on which is more_prevalent. _They also_directly interfere with the operation of transistors, light-emitting diodes and other_electronic and opto-electronic devices, by offering_an intermediate state inside_the band_gap._Deep-level traps shorten_the_non-radiative life_time of charge carriers, and—through the Shockley–Read–Hall_(SRH) process—facilitate_recombination of minority carriers, having adverse_effects on the semiconductor_device_performance.

Common chemical elements that produce deep-level_defects in silicon include iron, nickel,_copper, gold, and silver. _In_general,_transition metals produce this effect,_while light metals such as aluminium_do not.

Surface states_and crystallographic defects in the crystal lattice_can_also play role of deep-level traps.

Category:Condensed_matter_physics
Category:Optoelectronics
Category:Semiconductor properties
Category:Semiconductor structures Michael Stutch