Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Impact of Strain on Drain Current and Threshold Voltage of Nanoscale
  Double Gate Tunnel Field Effect Transistor: Theoretical Investigation and
  Analysis   Tunnel field effect transistor (TFET) devices are attractive as they show
good scalability and have very low leakage current. However they suffer from
low on-current and high threshold voltage. In order to employ the TFET for
circuit applications, these problems need to be tackled. In this paper, a novel
lateral strained double-gate TFET (SDGTFET) is presented. Using device
simulation, we show that the SDGTFET has a higher on-current, low leakage, low
threshold voltage, excellent subthreshold slope, and good short channel effects
and also meets important ITRS guidelines.

36
The categories of this paper are: cmp-lg
22
The categories of this paper are: chao-dyn
19
The categories of this paper are: eess
21
The categories of this paper are: adap-org
28
The categories of this paper are: alg-geom
32
The categories of this paper are: atom-ph
26
The categories of this paper are: bayes-an
16
The categories of this paper are: stat
31
The categories of this paper are: ao-sci
3
The categories of this paper are: physics
7
The categories of this paper are: hep-th
12
The categories of this paper are: nucl-th
20
The categories of this paper are: acc-phys
17
The categories of this paper are: q-fin
1
The categories of this paper are: cs
5
The categories of this paper are: gr-qc