Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Ultra-high strain in epitaxial silicon carbide nanostructures utilizing
  residual stress amplification   Strain engineering has attracted great attention, particularly for epitaxial
films grown on a different substrate. Residual strains of SiC have been widely
employed to form ultra-high frequency and high Q factor resonators. However, to
date the highest residual strain of SiC was reported to be limited to
approximately 0.6%. Large strains induced into SiC could lead to several
interesting physical phenomena, as well as significant improvement of resonant
frequencies. We report an unprecedented nano strain-amplifier structure with an
ultra-high residual strain up to 8% utilizing the natural residual stress
between epitaxial 3C SiC and Si. In addition, the applied strain can be tuned
by changing the dimensions of the amplifier structure. The possibility of
introducing such a controllable and ultra-high strain will open the door to
investigating the physics of SiC in large strain regimes, and the development
of ultra sensitive mechanical sensors.

33
The categories of this paper are: plasm-ph
13
The categories of this paper are: quant-ph
21
The categories of this paper are: adap-org
2
The categories of this paper are: math
16
The categories of this paper are: stat
22
The categories of this paper are: chao-dyn
0
The categories of this paper are: hep-ph
9
The categories of this paper are: nlin
12
The categories of this paper are: nucl-th
24
The categories of this paper are: dg-ga
27
The categories of this paper are: comp-gas
35
The categories of this paper are: mtrl-th
11
The categories of this paper are: hep-lat
36
The categories of this paper are: cmp-lg
3
The categories of this paper are: physics
31
The categories of this paper are: ao-sci