Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: InAs nanowire transistors with multiple, independent wrap-gate segments   We report a method for making horizontal wrap-gate nanowire transistors with
up to four independently controllable wrap-gated segments. While the step up to
two independent wrap-gates requires a major change in fabrication methodology,
a key advantage to this new approach, and the horizontal orientation more
generally, is that achieving more than two wrap-gate segments then requires no
extra fabrication steps. This is in contrast to the vertical orientation, where
a significant subset of the fabrication steps needs to be repeated for each
additional gate. We show that cross-talk between adjacent wrap-gate segments is
negligible despite separations less than 200 nm. We also demonstrate the
ability to make multiple wrap-gate transistors on a single nanowire using the
exact same process. The excellent scalability potential of horizontal wrap-gate
nanowire transistors makes them highly favourable for the development of
advanced nanowire devices and possible integration with vertical wrap-gate
nanowire transistors in 3D nanowire network architectures.

12
The categories of this paper are: nucl-th
13
The categories of this paper are: quant-ph
29
The categories of this paper are: funct-an
24
The categories of this paper are: dg-ga
6
The categories of this paper are: astro-ph
5
The categories of this paper are: gr-qc
28
The categories of this paper are: alg-geom
18
The categories of this paper are: econ
0
The categories of this paper are: hep-ph
7
The categories of this paper are: hep-th
20
The categories of this paper are: acc-phys
11
The categories of this paper are: hep-lat
32
The categories of this paper are: atom-ph
34
The categories of this paper are: chem-ph
33
The categories of this paper are: plasm-ph
30
The categories of this paper are: q-alg