Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Dual Metal-Gate Planar Field-Effect Transistor for Electrostatically
  Doped CMOS Design   In this paper, we demonstrate by simulation the general usability of an
electrostatically doped and electrically reconfigurable planar field-effect
transistor (FET) structure. The device concept is partly based on our already
published and fabricated silicon nanowire 3D-FET technology. The technological
key features of this general purpose FET contain Schottky S/D junctions on a
silicon-on-insulator (SOI) substrate additionally enabling high-temperature
operation of the proposed device. The transistors charge carrier type, i.e. n-
or ptype FET, is electrically switchable on the fly by applying a control-gate
voltage, which significantly increases the flexibility and versatility in
digital integrated circuits.

27
The categories of this paper are: comp-gas
35
The categories of this paper are: mtrl-th
22
The categories of this paper are: chao-dyn
8
The categories of this paper are: hep-ex
2
The categories of this paper are: math
23
The categories of this paper are: solv-int
29
The categories of this paper are: funct-an
7
The categories of this paper are: hep-th
20
The categories of this paper are: acc-phys
14
The categories of this paper are: math-ph
28
The categories of this paper are: alg-geom
33
The categories of this paper are: plasm-ph
5
The categories of this paper are: gr-qc
26
The categories of this paper are: bayes-an
12
The categories of this paper are: nucl-th
30
The categories of this paper are: q-alg