Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2   The linear dispersion relation in graphene[1,2] gives rise to a surprising
prediction: the resistivity due to isotropic scatterers (e.g. white-noise
disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show
that acoustic phonon scattering[4-6] is indeed independent of n, and places an
intrinsic limit on the resistivity in graphene of only 30 Ohm at room
temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2,
the mean free path for electron-acoustic phonon scattering is >2 microns, and
the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known
inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon
nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by
surface phonons of the SiO2 substrate[11,12] adds a strong temperature
dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4
cm^2/Vs, pointing out the importance of substrate choice for graphene
devices[13].

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The categories of this paper are: bayes-an
14
The categories of this paper are: math-ph
1
The categories of this paper are: cs
34
The categories of this paper are: chem-ph
24
The categories of this paper are: dg-ga
11
The categories of this paper are: hep-lat
19
The categories of this paper are: eess
16
The categories of this paper are: stat
8
The categories of this paper are: hep-ex
3
The categories of this paper are: physics
5
The categories of this paper are: gr-qc
32
The categories of this paper are: atom-ph
0
The categories of this paper are: hep-ph
33
The categories of this paper are: plasm-ph
12
The categories of this paper are: nucl-th
30
The categories of this paper are: q-alg