Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: High-Performance MoS2 Field-Effect Transistors Enabled by Chloride
  Doping: Record Low Contact Resistance (0.5 kohm*um) and Record High Drain
  Current (460 uA/um)   In this paper, we report a novel chemical doping technique to reduce the
contact resistance (Rc) of transition metal dichalcogenides (TMDs) -
eliminating two major roadblocks (namely, doping and high Rc) towards
demonstration of high-performance TMDs field-effect transistors (FETs). By
using 1,2 dichloroethane (DCE) as the doping reagent, we demonstrate an active
n-type doping density > 2*1019 cm-3 in a few-layer MoS2 film. This enabled us
to reduce the Rc value to a record low number of 0.5 kohm*um, which is ~10x
lower than the control sample without doping. The corresponding specific
contact resistivity (pc) is found to decrease by two orders of magnitude. With
such low Rc, we demonstrate 100 nm channel length (Lch) MoS2 FET with a drain
current (Ids) of 460 uA/um at Vds = 1.6 V, which is twice the best value
reported so far on MoS2 FETs.

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The categories of this paper are: hep-lat
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The categories of this paper are: supr-con
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The categories of this paper are: nlin
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The categories of this paper are: acc-phys
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The categories of this paper are: chem-ph
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The categories of this paper are: alg-geom
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The categories of this paper are: hep-ex
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The categories of this paper are: chao-dyn
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The categories of this paper are: astro-ph
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The categories of this paper are: gr-qc
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The categories of this paper are: patt-sol
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The categories of this paper are: dg-ga
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The categories of this paper are: nucl-ex
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The categories of this paper are: ao-sci
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The categories of this paper are: q-alg
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The categories of this paper are: econ