Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: 2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with
  Recessed-anode Structure   In this letter, we demonstrate high-performance lateral AlGaN/GaN Schottky
barrier diodes (SBD) on Si substrate with a recessed-anode structure. The
optimized rapid etch process provides results in improving etching quality with
a 0.26-nm roughness of the anode recessed surface. By using the high work
function metal Pt as the Schottky electrode, a low Von of 0.71 V is obtained
with a high uniformity of 0.023 V for 40 devices. Supported by the flat anode
recess surface and related field plate design, the SBD device with the
anode-cathode spacing of 15 um show the Ron,sp of 1.53 mOhm.cm2 only, the
breakdown voltage can reach 1592 V with a high power FOM (Figure-of-Merit) of
1656 MW/cm2. For the SBD device with the anode-cathode spacing of 30 um, the
breakdown voltage can be as high as 2521 V and the power FOM is 1244 MW/cm2.

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The categories of this paper are: patt-sol
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The categories of this paper are: alg-geom
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The categories of this paper are: econ
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The categories of this paper are: funct-an
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The categories of this paper are: dg-ga
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The categories of this paper are: eess
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The categories of this paper are: comp-gas
10
The categories of this paper are: q-bio
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The categories of this paper are: stat
31
The categories of this paper are: ao-sci
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The categories of this paper are: nucl-ex
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The categories of this paper are: hep-ex
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The categories of this paper are: cs
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The categories of this paper are: nlin
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The categories of this paper are: math
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The categories of this paper are: hep-lat