Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Monte Carlo simulations of spin transport in nanoscale
  In_{0.7}Ga_{0.3}As transistors: Temperature and size effects   Spin-based metal-oxide-semiconductor field-effect transistors (MOSFET) with a
high-mobility III-V channel are studied using self-consistent quantum corrected
ensemble Monte Carlo device simulations of charge and spin transport. The
simulations including spin-orbit coupling mechanisms (Dresselhaus and Rashba
coupling) examine the electron spin transport in the 25 nm gate length
In_{0.7}Ga_{0.3}As MOSFET. The transistor lateral dimensions (the gate length,
the source-to-gate, and the gate-to-drain spacers) are increased to investigate
the spin-dependent drain current modulation induced by the gate from room
temperature of 300 K down to 77 K. This modulation increases with increasing
temperature due to increased Rashba coupling. Finally, an increase of up to 20
nm in the gate length, source-to-gate, or the gate-to-drain spacers increases
the spin polarization and enhances the spin-dependent drain current modulation
at the drain due to polarization-refocusing effects.

34
The categories of this paper are: chem-ph
26
The categories of this paper are: bayes-an
1
The categories of this paper are: cs
29
The categories of this paper are: funct-an
17
The categories of this paper are: q-fin
8
The categories of this paper are: hep-ex
3
The categories of this paper are: physics
12
The categories of this paper are: nucl-th
16
The categories of this paper are: stat
35
The categories of this paper are: mtrl-th
0
The categories of this paper are: hep-ph
32
The categories of this paper are: atom-ph
19
The categories of this paper are: eess
31
The categories of this paper are: ao-sci
33
The categories of this paper are: plasm-ph
11
The categories of this paper are: hep-lat