Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Fabrication and Room-Temperature Single-Charging Behavior of
  Self-Aligned Single-Dot Memory Devices   Self-aligned single-dot memory devices and arrays were fabricated based on
arsenic-assisted etching and oxidation effects. The resulting device has a
floating gate of about 5-10 nm, presenting single-electron memory operation at
room temperature. In order to realize the final single-electron memory circuit,
this paper investigates process repeatability, device uniformity in single-dot
memory arrays, device scalability, and process transferability to an industrial
application.

10
The categories of this paper are: q-bio
22
The categories of this paper are: chao-dyn
1
The categories of this paper are: cs
26
The categories of this paper are: bayes-an
6
The categories of this paper are: astro-ph
35
The categories of this paper are: mtrl-th
23
The categories of this paper are: solv-int
12
The categories of this paper are: nucl-th
33
The categories of this paper are: plasm-ph
36
The categories of this paper are: cmp-lg
9
The categories of this paper are: nlin
20
The categories of this paper are: acc-phys
5
The categories of this paper are: gr-qc
28
The categories of this paper are: alg-geom
24
The categories of this paper are: dg-ga
37
The categories of this paper are: supr-con