Instruct: Identify the main and secondary category of Arxiv papers based on the titles and abstracts
Query: Electric-field tuning of the valley splitting in silicon corner dots   We perform an excited state spectroscopy analysis of a silicon corner dot in
a nanowire field-effect transistor to assess the electric field tunability of
the valley splitting. First, we demonstrate a back-gate-controlled transition
between a single quantum dot and a double quantum dot in parallel that allows
tuning the device in to corner dot formation. We find a linear dependence of
the valley splitting on back-gate voltage, from $880~\mu \text{eV}$ to $610~\mu
\text{eV}$ with a slope of $-45\pm 3~\mu \text{eV/V}$ (or equivalently a slope
of $-48\pm 3~\mu \text{eV/(MV/m)}$ with respect to the effective field). The
experimental results are backed up by tight-binding simulations that include
the effect of surface roughness, remote charges in the gate stack and discrete
dopants in the channel. Our results demonstrate a way to electrically tune the
valley splitting in silicon-on-insulator-based quantum dots, a requirement to
achieve all-electrical manipulation of silicon spin qubits.

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The categories of this paper are: hep-th
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The categories of this paper are: mtrl-th
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The categories of this paper are: astro-ph
3
The categories of this paper are: physics
5
The categories of this paper are: gr-qc
21
The categories of this paper are: adap-org
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The categories of this paper are: chem-ph
28
The categories of this paper are: alg-geom
33
The categories of this paper are: plasm-ph
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The categories of this paper are: nlin
20
The categories of this paper are: acc-phys
22
The categories of this paper are: chao-dyn
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The categories of this paper are: econ
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The categories of this paper are: patt-sol
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The categories of this paper are: quant-ph
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The categories of this paper are: comp-gas