Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel   Junctions
  We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low temperatures in epitaxial magnetic tunnel junctions composed of a ferromagnetic metal (MnAs) and a ferromagnetic semiconductor (GaMnAs) separated by a nonmagnetic semiconductor (AlAs). Analysis of the current-voltage characteristics yields detailed information about the asymmetric tunnel barrier. The low temperature conductance-voltage characteristics show a zero bias anomaly and a V^1/2 dependence of the conductance, indicating a correlation gap in the density of states of GaMnAs. These experiments suggest that MnAs/AlAs heterostructures offer well characterized tunnel junctions for high efficiency spin injection into GaAs. 
S. H. Chun, S. J. Potashnik, K. C. Ku, P. Schiffer, and N. Samarth