Transport through the Interface between a Semiconducting Carbon Nanotube   and a Metal Electrode
  We report a numerical study of the tunnel conductance through the Schottky barrier at the contact between a semiconducting carbon nanotube and a metal electrode. In a planar gate model the asymmetry between the p--doped and the n--doped region is shown to depend mainly on the difference between the electrode Fermi level and the band gap of carbon nanotubes. We quantitatively show how the gate/nanotube distance is important to get large on--off ratios. We explain the bend of the current versus gate voltage as the transition from a thermal--activation region to a tunneling region. A good agreement is obtained with experimental results for carbon nanotubes field--effect transistors. 
Takeshi Nakanishi, Adrian Bachtold, Cees Dekker (TU Delft)