Highly efficient room temperature spin injection in a   metal-insulator-semiconductor light emitting diode
  We demonstrate highly efficient spin injection at low and room temperature in an AlGaAs/GaAs semiconductor heterostructure from a CoFe/AlOx tunnel spin injector. We use a double-step oxide deposition for the fabrication of a pinhole-free AlOx tunnel barrier. The measurements of the circular polarization of the electroluminescence in the Oblique Hanle Effect geometry reveal injected spin polarizations of at least 24% at 80K and 12% at room temperature. 
P. Van Dorpe, V.F. Motsnyi, M. Nijboer, E. Goovaerts, V.I. Safarov, J.   Das, W. Van Roy, G. Borghs and J. De Boeck