Shot Noise in Tunneling through a Quantum Dot Array
  The shot noise suppression in a sample containing a layer of self-assembled InAs quantum dots has been investigated experimentally and theoretically. The observation of a non-monotonic dependence of the Fano factor on the bias voltage in a regime where only few quantum dot ground states contribute to the tunneling current is analyzed by a master equation model. Under the assumption of tunneling through states without Coulomb interaction this behaviour can be qualitatively reproduced by an analytical expression. 
G. Kiesslich, A. Wacker, E. Schoell, A. Nauen, F. Hohls and R.J. Haug