Phonon drag of electrons at high temperatures
  Temperature-dependent thermoelectric power (TEP) in semiconductor crystals and crystal structures containing an electron-vibrational centers (EVC) was investigated in this article. The TEP contain narrow pius at Debye temperatures for different phonons. In thin epitaxial layers on substrates such pius exist at Debye temperatures of substrates phonons. These pius existence imposable to explain on basis of known TEP theory but it may be explained by the phonon drag of electrons (PDE) effect. In this connection there is the necessity to change traditional point of view on the PDE effect existence only at low temperatures and expand the PDE theory on case of strong electron-phonon coupling provided by EVC at high temperatures. 
V.A. Vdovenkov