Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
  The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign. 
K. Racka, I. Kuryliszyn, M. Arciszewska, W. Dobrowolski, J.-M. Broto,   M. Goiran, O. Portugall, H. Rakoto, B. Raquet, V. Du...