Current-induced highly dissipative domains in high Tc thin films
  We have investigated the resistive response of high Tc thin films submitted to a high density of current. For this purpose, current pulses were applied into bridges made of Nd(1.15)Ba(1.85)Cu3O7 and Bi2Sr2CaCu2O8. By recording the time dependent voltage, we observe that at a certain critical current j*, a highly dissipative domain develops somewhere along the bridge. The successive formation of these domains produces stepped I-V characteristics. We present evidences that these domains are not regions with a temperature above Tc, as for hot spots. In fact this phenomenon appears to be analog to the nucleation of phase-slip centers observed in conventional superconductors near Tc, but here in contrast they appear in a wide temperature range. Under some conditions, these domains will propagate and destroy the superconductivity within the whole sample. We have measured the temperature dependence of j* and found a similar behavior in the two investigated compounds. This temperature dependence is just the one expected for the depairing current, but the amplitude is about 100 times smaller. 
S. Reymond, L. Antognazza, M. Decroux, E. Koller, P. Reinert, O.   Fischer