Excitonic Superconductivity in Charge Injected Organics
  Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This technique keeps the carrier channels free from defects without complications from the crystalline structure and the dopant impurity sites. In this paper we discuss the occurrence of superconductivity at the interface of a device by an unconventional technique. We examine a dynamical pairing mechanism governed by the excitons in the active device. The pairing of charge carriers takes place when the system is in a nonequilibrium (driven) state. We discuss the physics of a plausible superconducting transition and suggest new experiments. 
M. P. Das and F. Green