The Role of Non-Equilibrium Carriers in Formation of Thermo-E.M.F. in   Bipolar Semiconductors
  A new approach to thermoelectric phenomena, as a linear transport process of non-equilibrium charge carriers, is presented. The role of non-equilibrium carriers, as well as surface and bulk recombination, is demonstrated to be crucial even within a linear approximation. Electron and hole Fermi quasi-levels appeared in a thermal field are calculated in the case of thermoelectric current flow through a circuit. It is shown, for the first time, that the Fermi quasi-level of one of subsystem of quasi-particles can be a non-monotonic function of the coordinates. General expressions for the thermoelectric current, thermo-e.m.f., and electrical resistance of bipolar semiconductors have been obtained. For the first time the surface recombination and surface resistance were taken into account. 
Yu. G. Gurevich, G. N. Logvinov, I. N. Volovichev, G. Espejo, O. Yu.   Titov, A. Meriuts