Tuning the onset voltage of resonant tunneling through InAs quantum dots   by growth parameters
  We investigated the size dependence of the ground state energy in self-assembled InAs quantum dots embedded in resonant tunneling diodes. Individual current steps observed in the current-voltage characteristics are attributed to resonant single-electron tunneling via the ground state of individual InAs quantum dots. The onset voltage of the first step observed is shown to decrease systematically from 200 mV to 0 with increasing InAs coverage. We relate this to a coverage-dependent size of InAs dots grown on AlAs. The results are confirmed by atomic force micrographs and photoluminescence experiments on reference samples. 
I. Hapke-Wurst (1), U. Zeitler (1), U.F. Keyser (1), K. Pierz (2), Z.   Ma (2), R.J. Haug (1) ((1) Institut f. Festkoerperph...