Field Effect Transistors on Rubrene Single Crystals with Parylene Gate   Insulator
  We report on fabrication and characterization of the organic field effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field effect mobility up to 1 cm^2/Vs and the on/off ratio ~ 10^4. The temperature dependence of the mobility is discussed. 
V. Podzorov, V. M. Pudalov, and M. E. Gershenson