Photoexcited transients in disordered semiconductors: Quantum coherence   at very short to intermediate times
  We study theoretically electron transients in semiconductor alloys excited by light pulses shorter than 100 femtoseconds and tuned above the absorption edge during and shortly after the pulse, when disorder scattering is dominant.   We use non-equilibrium Green functions employing the field-dependent self-consistent Born approximation. The propagators and the particle correlation function are obtained by a direct numerical solution of the Dyson equations in differential form. For the purely elastic scattering in our model system the solution procedures for the retarded propagator and for the correlation function can be decoupled.The propagator is used as an input in calculating the correlation function. Numerical results combined with a cumulant expansion permit to separate in a consistent fashion the dark and the induced parts of the self-energy. The dark behavior reduces to propagation of strongly damped quasi-particles; the field induced self-energy leads to an additional time non-local coherence. The particle correlation function is formed by a coherent transient and an incoherent back-scattered component. The particle number is conserved only if the field induced coherence is fully incorporated. The transient polarization and the energy balance are also obtained and interpreted. 
A. Kalvov\'a, B. Velick\'y (Institute of Physics, ASCR, Prague, Czech   Republic)