Electric-Field-Induced Mott Insulating States in Organic Field-Effect   Transistors
  We consider the possibility that the electrons injected into organic field-effect transistors are strongly correlated. A single layer of acenes can be modelled by a Hubbard Hamiltonian similar to that used for the kappa-(BEDT-TTF)(2)X family of organic superconductors. The injected electrons do not necessarily undergo a transition to a Mott insulator state as they would in bulk crystals when the system is half-filled. We calculate the fillings needed for obtaining insulating states in the framework of the slave-boson theory and in the limit of large Hubbard repulsion, U. We also suggest that these Mott states are unstable above some critical interlayer coupling or long-range Coulomb interaction. 
Olivier Cepas and Ross H. McKenzie