Spin Injection: Interface Resistance in Fe/Semiconductor Junctions   Calculated from First Principles
  We calculate the current spin polarisation and the interface resistance of Fe/GaAs and Fe/ZnSe (001) spin injection junctions from first principles, including also the possibility of a Schottky barrier. From our results of interface resistance we estimate the barrier thickness needed for efficient spin injection if the process is non-ballistic. 
Olaf Wunnicke, Phivos Mavropoulos, Peter H. Dederichs