Current induced magnetization switching in magnetic tunnel junctions
  A new mechanism different from the spin accumulation picture is proposed for the current induced magnetization switching in magnetic tunnel junctions by taking into account the effect of the electron electron interaction. We found in tunnel structures the possibility of an enhanced spin switching effect that, when normalized with respect to the current, is much bigger than that in multilayers. Some recent experimental results show evidence for the present picture. 
Z. F. Lin, S. T. Chui and L. B. Hu