Characterization of one-dimensional quantum channels in InAs/AlSb
  We report the magnetoresistance characteristics of one-dimensional electrons confined in a single InAs quantum well sandwiched between AlSb barriers. As a result of a novel nanofabrication scheme that utilizes a 3nm-shallow wet chemical etching to define the electrostatic lateral confinement, the system is found to possess three important properties: specular boundary scattering, a strong lateral confinement potential, and a conducting channel width that is approximately the lithography width. Ballistic transport phenomena, including the quenching of the Hall resistance, the last Hall plateau, and a strong negative bend resistance, are observed at 4K in cross junctions with sharp corners. In a ring geometry, we have observed Aharonov-Bohm interference that exhibits characteristics different from those of the GaAs counterpart due to the ballistic nature of electron transport and the narrowness of the conducting channel width. 
C.H. Yang, M.J. Yang, K.A. Cheng, and J.C. Culbertson