Practical design and simulation of silicon-based quantum dot qubits
  Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics. 
Mark Friesen, Paul Rugheimer, Donald E. Savage, Max G. Lagally, Daniel   W. van der Weide, Robert Joynt, Mark A. Eriksson