[ARM] Orion NAND: Make asm volatile avoid GCC pushing ldrd out of the loop
[ARM] Orion NAND: Make asm volatile avoid GCC pushing ldrd out of the loop

GCC 4.3.3 and 4.4.1 happily moves the dword load instruction out of the
loop in orion_nand_read_buf. This patch makes the instruction volatile
to avoid the issue. I've discussed this at gcc-help, refer to the thread
at

  http://gcc.gnu.org/ml/gcc-help/2009-08/msg00187.html

The early clobber is added to avoid the destination registers and the
source register overlapping.

Signed-off-by: Simon Kagstrom <55f06860226d5500245ed5c8a62a0a8911dc9a7e@netinsight.net>
Signed-off-by: Nicolas Pitre <d659c10e27d52b00987b65e85d99bce5480adcae@marvell.com>

TeamVee-Kanas/android_kernel_samsung_kanas,KristFoundation/Programs,TeamVee-Kanas/android_kernel_samsung_kanas,TeamVee-Kanas/android_kernel_samsung_kanas,KristFoundation/Programs,KristFoundation/Programs,TeamVee-Kanas/android_kernel_samsung_kanas,KristFoundation/Programs,KristFoundation/Programs,KristFoundation/Programs,TeamVee-Kanas/android_kernel_samsung_kanas